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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1368 DESCRIPTION *With TO-126 package *Low collector saturation voltage APPLICATIONS *For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 25 25 5 1.5 8 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1368 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0 25 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=50A; IE=0 IE=50A; IB=0 25 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 0.8 V A A ICBO Collector cut-off current VCB=25V; IE=0 1.0 IEBO Emitter cut-off current VEB=5V; IC=0 1.0 hFE DC current gain IC=0.5A ; VCE=2V 60 320 fT Transition frequency IC=0.5A ; VCE=5V 180 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1368 Fig.2 Outline dimensions 3 |
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